SI5511DC-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W, 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SI5511DC-T1-E3 Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3.1W, 2.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
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SI5511DC-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W, 2.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI5511DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH