SI5517DU-T1-E3 Vishay Siliconix

Description: MOSFET N/P-CH 20V 6A CHIPFET, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: PowerPAK® ChipFET™ Dual, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® ChipFet Dual, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V, Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 8.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).