SI5853DC-T1-E3 VISHAY

Description: MOSFET P-CH 20V 2.7A 1206-8, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.1W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).