SI5908DC-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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Technische Details SI5908DC-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.4A, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.
Weitere Produktangebote SI5908DC-T1-E3 nach Preis ab 0.86 EUR bis 3.26 EUR
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SI5908DC-T1-E3 | Vishay Semiconductors |
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET |
auf Bestellung 13333 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5908DC-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.4A 1206-8 Part Status: Active Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.4A Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 6244 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI5908DC-T1-E3 | VISHAY |
SOT23-8 |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI5908DC-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET
auf Bestellung 13333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.9 EUR |
| 6000+ | 0.86 EUR |
| SI5908DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| SI5908DC-T1-E3 |
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Hersteller: VISHAY
SOT23-8
SOT23-8
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)