SI5908DC-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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Technische Details SI5908DC-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.4A, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.
Weitere Produktangebote SI5908DC-T1-GE3 nach Preis ab 0.85 EUR bis 2.09 EUR
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SI5908DC-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs 1206-8 ChipFET |
auf Bestellung 33407 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5908DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
auf Bestellung 11042 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI5908DC-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 8V Vgs 1206-8 ChipFET
MOSFETs 20V Vds 8V Vgs 1206-8 ChipFET
auf Bestellung 33407 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.86 EUR |
| 6000+ | 0.85 EUR |
| SI5908DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 11042 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 12+ | 1.49 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 1.01 EUR |