| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.44 EUR |
| 10+ | 1.64 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.13 EUR |
| 3000+ | 0.94 EUR |
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Technische Details SI6423ADQ-T1-GE3 Vishay / Siliconix
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP, Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc).
Weitere Produktangebote SI6423ADQ-T1-GE3 nach Preis ab 1.18 EUR bis 3.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI6423ADQ-T1-GE3 | Vishay Siliconix |
 Description: MOSFET PCH 20V 10.3/12.5A 8TSSOPInput Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI6423ADQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.23 EUR |
| 50+ | 1.68 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.18 EUR |