SI6423ADQ-T1-GE3 Vishay Siliconix

Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP, Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc).