SI6463DQ Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8.8A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 704+ | 0.9 EUR |
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Technische Details SI6463DQ Fairchild Semiconductor
Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8.8A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 10 V.