SI6562CDQ-T1-BE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 1.48 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.64 EUR |
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Technische Details SI6562CDQ-T1-BE3 Vishay Semiconductors
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP, Part Status: Active, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI6562CDQ-T1-BE3 nach Preis ab 0.76 EUR bis 2.52 EUR
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SI6562CDQ-T1-BE3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 20V 5.7A 8TSSOPPart Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 3198 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI6562CDQ-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 12+ | 1.59 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |