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SI6562CDQ-T1-BE3

SI6562CDQ-T1-BE3 Vishay Semiconductors

si6562cd.pdf Hersteller: Vishay Semiconductors
MOSFETs TSSOP DUAL CHAN 20V
auf Bestellung 11875 Stücke:
Lieferzeit 10-14 Tag (e)
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2+2.22 EUR
10+1.48 EUR
100+1.01 EUR
500+0.80 EUR
1000+0.73 EUR
3000+0.65 EUR
6000+0.63 EUR
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Technische Details SI6562CDQ-T1-BE3 Vishay Semiconductors

Description: MOSFET N/P-CH 20V 5.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active.

Weitere Produktangebote SI6562CDQ-T1-BE3 nach Preis ab 0.76 EUR bis 2.52 EUR

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SI6562CDQ-T1-BE3 SI6562CDQ-T1-BE3 Hersteller : Vishay Siliconix si6562cd.pdf Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SI6562CDQ-T1-BE3 SI6562CDQ-T1-BE3 Hersteller : Vishay Siliconix si6562cd.pdf Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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