SI6926ADQ-T1-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Produktrezensionen
Produktbewertung abgeben
Technische Details SI6926ADQ-T1-BE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP, Part Status: Active, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Drain to Source Voltage (Vdss): 20V, Power - Max: 830mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta).
Weitere Produktangebote SI6926ADQ-T1-BE3 nach Preis ab 0.86 EUR bis 1.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI6926ADQ-T1-BE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 830mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA |
auf Bestellung 8985 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI6926ADQ-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 8985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.86 EUR |