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Technische Details SI6926ADQ-T1-E3 Vishay
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP, Part Status: Active, Supplier Device Package: 8-TSSOP, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.1A, Drain to Source Voltage (Vdss): 20V, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate.
Weitere Produktangebote SI6926ADQ-T1-E3 nach Preis ab 0.63 EUR bis 3.61 EUR
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SI6926ADQ-T1-E3 | Vishay |
 Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI6926ADQ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Part Status: Active Supplier Device Package: 8-TSSOP Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 20V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6926ADQ-T1-E3 | Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs TSSOP-8 |
auf Bestellung 34808 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6926ADQ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 20V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI6926ADQ-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.67 EUR |
| 6000+ | 0.63 EUR |
| SI6926ADQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.98 EUR |
| SI6926ADQ-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 8V Vgs TSSOP-8
MOSFETs 20V Vds 8V Vgs TSSOP-8
auf Bestellung 34808 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.81 EUR |
| 3000+ | 0.79 EUR |
| SI6926ADQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.61 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.11 EUR |