auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.56 EUR |
| 6000+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI6926ADQ-T1-E3 Vishay
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.1A, Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active.
Weitere Produktangebote SI6926ADQ-T1-E3 nach Preis ab 0.52 EUR bis 3.03 EUR
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SI6926ADQ-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI6926ADQ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6926ADQ-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs TSSOP-8 |
auf Bestellung 37789 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6926ADQ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6926ADQ-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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SI6926ADQ-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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SI6926ADQ-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 43mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI6926ADQ-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 43mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |