SI6954ADQ-T1-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.76 EUR |
| 6000+ | 0.73 EUR |
| 9000+ | 0.69 EUR |
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Technische Details SI6954ADQ-T1-BE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active.
Weitere Produktangebote SI6954ADQ-T1-BE3 nach Preis ab 0.81 EUR bis 1.85 EUR
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SI6954ADQ-T1-BE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 830mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6954ADQ-T1-BE3 | Vishay Semiconductors |
MOSFET N-CHANNEL 2.5-V (G-S) BATTERY |
auf Bestellung 17390 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI6954ADQ-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 12+ | 1.51 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.81 EUR |
| SI6954ADQ-T1-BE3 |
|
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 2.5-V (G-S) BATTERY
MOSFET N-CHANNEL 2.5-V (G-S) BATTERY
auf Bestellung 17390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.52 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.05 EUR |
| 3000+ | 0.89 EUR |