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SI7114ADN-T1-GE3

SI7114ADN-T1-GE3 Vishay Siliconix

si7114ad.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.64 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI7114ADN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 35A PPAK 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V, Power Dissipation (Max): 3.7W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V.

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SI7114ADN-T1-GE3 SI7114ADN-T1-GE3 Hersteller : Vishay Semiconductors si7114ad.pdf MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 21319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
10+1.29 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.64 EUR
3000+0.56 EUR
Mindestbestellmenge: 2
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SI7114ADN-T1-GE3 SI7114ADN-T1-GE3 Hersteller : Vishay Siliconix si7114ad.pdf Description: MOSFET N-CH 30V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
auf Bestellung 24903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
13+1.46 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.71 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SI7114ADN-T1-GE3 SI7114ADN-T1-GE3 Hersteller : Vishay si7114ad.pdf Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
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SI7114ADN-T1-GE3 Hersteller : VISHAY si7114ad.pdf SI7114ADN-T1-GE3 SMD N channel transistors
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