SI7114DN-T1-E3 Vishay Semiconductors
auf Bestellung 9821 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.50 EUR |
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Technische Details SI7114DN-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 30V 11.7A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V.
Weitere Produktangebote SI7114DN-T1-E3 nach Preis ab 1.36 EUR bis 4.19 EUR
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SI7114DN-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 11.7A PPAK1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V |
auf Bestellung 2088 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7114DN-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 1310 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7114DN-T1-E3 | Hersteller : VISHAY |
SI7114DN-T1-E3 SMD N channel transistors |
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SI7114DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 11.7A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V |
Produkt ist nicht verfügbar |