SI7114DN-T1-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Technische Details SI7114DN-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A, Mounting: SMD, Power dissipation: 3.8W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 19nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 60A, Case: PowerPAK® 1212-8, Drain-source voltage: 30V, Drain current: 18.3A, On-state resistance: 10mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI7114DN-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI7114DN-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 30V 11.7A 1212-8 |
Produkt ist nicht verfügbar |
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SI7114DN-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 30V 11.7A 1212-8 |
Produkt ist nicht verfügbar |
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SI7114DN-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 30V 11.7A 1212-8 |
Produkt ist nicht verfügbar |
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SI7114DN-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V |
Produkt ist nicht verfügbar |
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SI7114DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |