SI7117DN-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.52 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.87 EUR |
| 6000+ | 0.83 EUR |
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Technische Details SI7117DN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 150V 2.17A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7117DN-T1-GE3 nach Preis ab 0.94 EUR bis 3.04 EUR
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SI7117DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 150V 2.17A PPAKInput Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 1461 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7117DN-T1-GE3 | Vishay / Siliconix |
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 2097 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7117DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 150V 2.17A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.94 EUR |
| SI7117DN-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 2097 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH