SI7178DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.03 EUR |
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Technische Details SI7178DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7178DP-T1-GE3 nach Preis ab 2.14 EUR bis 6.16 EUR
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SI7178DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V 60A 104W 14mohm @ 10V |
auf Bestellung 2463 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7178DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V |
auf Bestellung 6127 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7178DP-T1-GE3 |
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auf Bestellung 1211 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7178DP-T1-GE3 | Hersteller : Vishay BC Components |
N-канальный ПТ (Vds=100V, Id=60A@T=25C, P=104W).... Група товару: Транзистори Корпус: SO-8 Од. вим: шт Anzahl je Verpackung: 1000 Stücke |
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