SI7234DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 12V 60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.32 EUR |
6000+ | 3.18 EUR |
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Technische Details SI7234DP-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 60A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 60A, Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SI7234DP-T1-GE3 nach Preis ab 3.52 EUR bis 6.86 EUR
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SI7234DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 12V 60A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
auf Bestellung 16014 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7234DP-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 12V Vds 12V Vgs PowerPAK SO-8 |
auf Bestellung 22117 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7234DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Power dissipation: 46W Drain-source voltage: 12V Drain current: 60A On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7234DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Power dissipation: 46W Drain-source voltage: 12V Drain current: 60A On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |