auf Bestellung 2345 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.53 EUR |
| 6000+ | 0.51 EUR |
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Technische Details SI7326DN-T1-E3 Vishay / Siliconix
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V.
Weitere Produktangebote SI7326DN-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SI7326DN-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7326DN-T1-E3 | Hersteller : VISHAY |
07+ |
auf Bestellung 495 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7326DN-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7326DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.5A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SI7326DN-T1-E3 | Hersteller : VISHAY |
SI7326DN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI7326DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI7326DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
Produkt ist nicht verfügbar |