Technische Details SI7450DP-T1-RE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 5.3A; Idm: 40A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 5.3A, Pulsed drain current: 40A, Power dissipation: 5.2W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 90mΩ, Mounting: SMD, Gate charge: 42nC, Kind of package: reel; tape, Kind of channel: enhancement, Technology: TrenchFET®, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI7450DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI7450DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 5.3A; Idm: 40A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.3A Pulsed drain current: 40A Power dissipation: 5.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7450DP-T1-RE3 | Hersteller : Vishay / Siliconix |
 MOSFET 200V Vds 20V Vgs PowerPAK SO-8 |
Produkt ist nicht verfügbar |
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| SI7450DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 5.3A; Idm: 40A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.3A Pulsed drain current: 40A Power dissipation: 5.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |