| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 3.97 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.28 EUR |
| 1000+ | 2.23 EUR |
| 3000+ | 2.01 EUR |
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Technische Details SI7456DP-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 100V 5.7A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V.
Weitere Produktangebote SI7456DP-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SI7456DP-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 5.7A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
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SI7456DP-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.7A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI7456DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.7A; Idm: 40A; 1W Mounting: SMD Pulsed drain current: 40A Power dissipation: 1W Gate charge: 44nC Polarisation: unipolar Technology: TrenchFET® Drain current: 5.7A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 25mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SI7456DP-T1-E3 | Vishay |
Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI7456DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI7456DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI7456DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.7A; Idm: 40A; 1W
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1W
Gate charge: 44nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 5.7A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 25mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.7A; Idm: 40A; 1W
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1W
Gate charge: 44nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 5.7A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 25mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI7456DP-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH