SI7456DP-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.42 EUR |
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Technische Details SI7456DP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V.
Weitere Produktangebote SI7456DP-T1-E3 nach Preis ab 1.58 EUR bis 5.3 EUR
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SI7456DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 5.7A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V |
auf Bestellung 6561 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7456DP-T1-E3 | Hersteller : Vishay Semiconductors |
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| SI7456DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.7A; Idm: 40A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Pulsed drain current: 40A Power dissipation: 1W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
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| SI7456DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.7A; Idm: 40A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Pulsed drain current: 40A Power dissipation: 1W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |