SI7456DP-T1-E3 Vishay Semiconductors

Description: MOSFET N-CH 100V 5.7A PPAK SO-8, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).