SI7465DP-T1-E3
Produktcode: 199543
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SI7465DP-T1-E3 nach Preis ab 0.73 EUR bis 3.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7465DP-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 3.2A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 729 Stücke: Lieferzeit 14-21 Tag (e) |
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|
SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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|
SI7465DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 729 Stücke: Lieferzeit 14-21 Tag (e) |
|
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SI7465DP-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -3.2A; Idm: -25A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Power dissipation: 0.94W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -25A Technology: TrenchFET® |
auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7465DP-T1-E3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 124527 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7465DP-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 3.2A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
auf Bestellung 37655 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7465DP-T1-E3 | Vishay |
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auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.86 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.86 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.87 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.87 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1 EUR |
| 9000+ | 0.89 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 134+ | 1.29 EUR |
| 135+ | 1.26 EUR |
| 160+ | 1.04 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.81 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.43 EUR |
| 18000+ | 1.29 EUR |
| 27000+ | 1.17 EUR |
| 36000+ | 1.08 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 115+ | 1.5 EUR |
| 134+ | 1.24 EUR |
| 135+ | 1.19 EUR |
| 160+ | 0.96 EUR |
| 250+ | 0.92 EUR |
| 500+ | 0.73 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -3.2A; Idm: -25A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 0.94W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -25A
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -3.2A; Idm: -25A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 0.94W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -25A
Technology: TrenchFET®
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 1.95 EUR |
| 65+ | 1.33 EUR |
| 100+ | 1.06 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 124527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.58 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.11 EUR |
| 3000+ | 0.99 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 37655 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.32 EUR |
| 50+ | 1.75 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| SI7465DP-T1-E3 |
![]() |
Hersteller: Vishay
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)




