| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.37 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.81 EUR |
| 6000+ | 1.44 EUR |
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Technische Details SI7469ADP-T1-RE3 Vishay / Siliconix
Description: VISHAY - SI7469ADP-T1-RE3 - Leistungs-MOSFET, p-Kanal, 80 V, 46 A, 0.0161 ohm, PowerSO, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80, Dauer-Drainstrom Id: 46, Qualifikation: -, Verlustleistung Pd: 73.5, Gate-Source-Schwellenspannung, max.: 2.6, Verlustleistung: 73.5, Bauform - Transistor: PowerSO, Anzahl der Pins: 8, Produktpalette: TrenchFET Gen IV, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.0161, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0161, SVHC: No SVHC (19-Jan-2021).
Weitere Produktangebote SI7469ADP-T1-RE3 nach Preis ab 2.25 EUR bis 5.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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SI7469ADP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET P-CH 80V 7.4A/46A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7469ADP-T1-RE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.25 EUR |