SI7478DP-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Technische Details SI7478DP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7478DP-T1-E3 nach Preis ab 2.38 EUR bis 6.89 EUR
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SI7478DP-T1-E3 | Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 4356 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7478DP-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 15A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V |
auf Bestellung 7578 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI7478DP-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 20V Vgs PowerPAK SO-8
MOSFETs 60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 4356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.72 EUR |
| 10+ | 4.49 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.75 EUR |
| SI7478DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 7578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.89 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.14 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.38 EUR |