SI7478DP-T1-GE3 Vishay / Siliconix

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 20A; Idm: 60A; 5.4W, Power dissipation: 5.4W, Mounting: SMD, Kind of package: reel; tape, Case: PowerPAK® SO8, Drain-source voltage: 60V, Drain current: 20A, On-state resistance: 8.8mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 160nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 60A, Anzahl je Verpackung: 3000 Stücke.