SI7489DP-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7489DP-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V, Power Dissipation (Max): 5.2W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V.
Weitere Produktangebote SI7489DP-T1-E3 nach Preis ab 1.29 EUR bis 5.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7489DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SI7489DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R |
auf Bestellung 1290 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SI7489DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R |
auf Bestellung 1290 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI7489DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -100V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 7345 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI7489DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 28A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V Power Dissipation (Max): 5.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
auf Bestellung 27663 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI7489DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
| SI7489DP-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 518 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
|
|
SI7489DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| SI7489DP-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -28A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -28A Pulsed drain current: -40A Power dissipation: 53W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI7489DP-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -28A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -28A Pulsed drain current: -40A Power dissipation: 53W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |