SI7620DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 13A PPAK1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
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Technische Details SI7620DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 150V 13A PPAK1212-8, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® 1212-8.
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SI7620DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 13A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI7620DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 13A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 13A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH