SI7623DN-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.12 EUR |
| 3000+ | 1.08 EUR |
| 6000+ | 1.03 EUR |
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Technische Details SI7623DN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 35A PPAK1212-8, Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7623DN-T1-GE3 nach Preis ab 1.14 EUR bis 2.6 EUR
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SI7623DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 35A PPAK1212-8Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 2740 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7623DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 2740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.14 EUR |