auf Bestellung 2286 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 1.44 EUR |
| 114+ | 1.27 EUR |
| 115+ | 1.21 EUR |
| 116+ | 1.15 EUR |
| 129+ | 0.99 EUR |
| 250+ | 0.95 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7623DN-T1-GE3 Vishay
Description: MOSFET P-CH 20V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V.
Weitere Produktangebote SI7623DN-T1-GE3 nach Preis ab 0.76 EUR bis 2.60 EUR
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SI7623DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2286 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7623DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 12V Vgs PowerPAK 1212-8 |
auf Bestellung 2234 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7623DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V |
auf Bestellung 2740 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7623DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SI7623DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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| SI7623DN-T1-GE3 | Hersteller : VISHAY |
SI7623DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SI7623DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V |
Produkt ist nicht verfügbar |