SI7636DP-T1-E3 Vishay
Hersteller: VishaySI7636DP-T1-E3 Vishay MOSFETs Transistor N-CH 30V 17A 8-Pin PowerPAK SO T/R - Arrow.com
auf Bestellung 874 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 2.16 EUR |
| 75+ | 1.79 EUR |
| 100+ | 1.51 EUR |
| 250+ | 1.44 EUR |
| 500+ | 1.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7636DP-T1-E3 Vishay
Description: MOSFET N-CH 30V 17A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V.
Weitere Produktangebote SI7636DP-T1-E3 nach Preis ab 1.34 EUR bis 2.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI7636DP-T1-E3 | Hersteller : Vishay |
SI7636DP-T1-E3 Vishay MOSFETs Transistor N-CH 30V 17A 8-Pin PowerPAK SO T/R - Arrow.com |
auf Bestellung 874 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI7636DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 28A 0.004Ohm |
auf Bestellung 4201 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SI7636DP-T1-E3 | Hersteller : SILICONIX |
09+ |
auf Bestellung 698 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
| SI7636DP-T1-E3 | Hersteller : VISHAY |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
| SI7636DP-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 518 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
 |
SI7636DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 17A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SI7636DP-T1-E3 | Hersteller : Vishay |
SI7636DP-T1-E3 Vishay MOSFETs Transistor N-CH 30V 17A 8-Pin PowerPAK SO T/R - Arrow.com |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SI7636DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 17A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SI7636DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 17A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||
| SI7636DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 28A; Idm: 60A; 5.2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 60A Power dissipation: 5.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |