SI7636DP-T1-E3 Vishay Semiconductors

Description: MOSFET N-CH 30V 17A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).