Technische Details SI7806ADN-T1-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W, Kind of package: reel; tape, Technology: TrenchFET®, Case: PowerPAK® 1212-8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 20nC, On-state resistance: 16mΩ, Power dissipation: 3.7W, Drain current: 14A, Gate-source voltage: ±20V, Drain-source voltage: 30V, Pulsed drain current: 40A, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI7806ADN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI7806ADN-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Technology: TrenchFET® Case: PowerPAK® 1212-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC On-state resistance: 16mΩ Power dissipation: 3.7W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 40A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7806ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 1212-8 |
Produkt ist nicht verfügbar |
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SI7806ADN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 14A 3.7W 11mohm @ 10V |
Produkt ist nicht verfügbar |
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| SI7806ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Technology: TrenchFET® Case: PowerPAK® 1212-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC On-state resistance: 16mΩ Power dissipation: 3.7W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 40A |
Produkt ist nicht verfügbar |