Technische Details SI7806ADN-T1-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W, Case: PowerPAK® 1212-8, Drain-source voltage: 30V, Drain current: 14A, On-state resistance: 16mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.7W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 20nC, Technology: TrenchFET®, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 40A, Mounting: SMD, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI7806ADN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SI7806ADN-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7806ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 1212-8 |
Produkt ist nicht verfügbar |
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SI7806ADN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 14A 3.7W 11mohm @ 10V |
Produkt ist nicht verfügbar |
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| SI7806ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
Produkt ist nicht verfügbar |