SI7812DN-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.56 EUR |
| 3000+ | 1.35 EUR |
| 6000+ | 1.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7812DN-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 75V 16A PPAK1212-8, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc).
Weitere Produktangebote SI7812DN-T1-E3 nach Preis ab 1.57 EUR bis 4.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7812DN-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 75V 16A PPAK1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V |
auf Bestellung 4461 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| SI7812DN-T1-E3 | VISHAY |
09+ |
auf Bestellung 1588 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7812DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 4461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.73 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.57 EUR |
| SI7812DN-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 1588 Stücke:
Lieferzeit 21-28 Tag (e)