SI7862ADP-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
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Technische Details SI7862ADP-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W, Case: PowerPAK® SO8, Drain-source voltage: 16V, Drain current: 29A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 5.4W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 80nC, Technology: TrenchFET®, Kind of channel: enhancement, Gate-source voltage: ±8V, Pulsed drain current: 60A, Mounting: SMD, Anzahl je Verpackung: 3000 Stücke.
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SI7862ADP-T1-GE3 | Hersteller : Vishay Siliconix |
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SI7862ADP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V |
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| SI7862ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD |
Produkt ist nicht verfügbar |