SI7900AEDN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7900AEDN-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7900AEDN-T1-E3 nach Preis ab 1.06 EUR bis 3.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI7900AEDN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 16748 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SI7900AEDN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 |
auf Bestellung 8845 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| SI7900AEDN-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 75 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
 |
SI7900AEDN-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| SI7900AEDN-T1-E3 | Hersteller : VISHAY |
SI7900AEDN-T1-E3 SMD N channel transistors |
Produkt ist nicht verfügbar |