SI7904DN-T1-E3 VISHAY

Description: MOSFET 2N-CH 20V 5.3A PPAK 1212, Current - Continuous Drain (Id) @ 25°C: 5.3A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 1V @ 935µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7.7A, 4.5V.