SI7922DN-T1-E3
Produktcode: 149546
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote SI7922DN-T1-E3 nach Preis ab 1.49 EUR bis 4.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI7922DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7922DN-T1-E3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 3190 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7922DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.8 EUR |
| 10+ | 3.08 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.11 EUR |
| SI7922DN-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 3190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 2.37 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.74 EUR |
| 3000+ | 1.55 EUR |
| 6000+ | 1.49 EUR |


