SI7923DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 1.14 EUR |
| 6000+ | 1.1 EUR |
| 9000+ | 1.06 EUR |
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Technische Details SI7923DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SI7923DN-T1-GE3 nach Preis ab 1.08 EUR bis 2.53 EUR
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SI7923DN-T1-GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 9372 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7923DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 34266 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7923DN-T1-GE3 | VISHAY |
09+ SOP16 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7923DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 9372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.75 EUR |
| 10+ | 1.45 EUR |
| 100+ | 1.16 EUR |
| 500+ | 1.08 EUR |
| SI7923DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 34266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 10+ | 2.1 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.2 EUR |
| SI7923DN-T1-GE3 |
|
Hersteller: VISHAY
09+ SOP16
09+ SOP16
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)