SI7960DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
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Technische Details SI7960DP-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SI7960DP-T1-GE3
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SI7960DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A Drain to Source Voltage (Vdss): 60V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI7960DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH