SI8401DB-T1-E3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.77W
On-state resistance: 95mΩ
Pulsed drain current: -10A
Drain current: -4.9A
Polarisation: unipolar
Gate charge: 17nC
Drain-source voltage: -20V
Gate-source voltage: ±12V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.77W
On-state resistance: 95mΩ
Pulsed drain current: -10A
Drain current: -4.9A
Polarisation: unipolar
Gate charge: 17nC
Drain-source voltage: -20V
Gate-source voltage: ±12V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
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Technische Details SI8401DB-T1-E3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A, Technology: TrenchFET®, Mounting: SMD, Case: MICROFOOT® 1.6x1.6, Kind of package: reel; tape, Kind of channel: enhanced, Power dissipation: 2.77W, On-state resistance: 95mΩ, Pulsed drain current: -10A, Drain current: -4.9A, Polarisation: unipolar, Gate charge: 17nC, Drain-source voltage: -20V, Gate-source voltage: ±12V, Type of transistor: P-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI8401DB-T1-E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI8401DB-T1-E3 | Hersteller : Vishay Siliconix | Description: MOSFET P-CH 20V 3.6A 4MICROFOOT |
Produkt ist nicht verfügbar |
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SI8401DB-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V |
Produkt ist nicht verfügbar |
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SI8401DB-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 95mΩ Pulsed drain current: -10A Drain current: -4.9A Polarisation: unipolar Gate charge: 17nC Drain-source voltage: -20V Gate-source voltage: ±12V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |