SI8406DB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A 6MICRO FOOT
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
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Technische Details SI8406DB-T2-E1 Vishay Siliconix
Description: VISHAY - SI8406DB-T2-E1 - Leistungs-MOSFET, n-Kanal, 20 V, 16 A, 0.026 ohm, MICRO FOOT, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20, Dauer-Drainstrom Id: 16, hazardous: false, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 13, Gate-Source-Schwellenspannung, max.: 400, euEccn: NLR, Verlustleistung: 13, Bauform - Transistor: MICRO FOOT, Anzahl der Pins: 6, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.026, Rds(on)-Prüfspannung: 4.5, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.026, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote SI8406DB-T2-E1 nach Preis ab 0.26 EUR bis 1.3 EUR
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SI8406DB-T2-E1 | Vishay |
Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R |
auf Bestellung 2868 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8406DB-T2-E1 | Vishay |
Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R |
auf Bestellung 2868 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8406DB-T2-E1 | Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 |
auf Bestellung 18101 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8406DB-T2-E1 | Vishay Siliconix |
Description: MOSFET N-CH 20V 16A 6MICRO FOOT Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-Micro Foot™ (1.5x1) Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA Packaging: Cut Tape (CT) |
auf Bestellung 5466 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI8406DB-T2-E1 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R
Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R
auf Bestellung 2868 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 415+ | 0.43 EUR |
| 419+ | 0.42 EUR |
| 451+ | 0.38 EUR |
| 455+ | 0.37 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| SI8406DB-T2-E1 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R
Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R
auf Bestellung 2868 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 395+ | 0.45 EUR |
| 411+ | 0.42 EUR |
| 415+ | 0.39 EUR |
| 419+ | 0.38 EUR |
| 451+ | 0.33 EUR |
| 455+ | 0.32 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| SI8406DB-T2-E1 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
MOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
auf Bestellung 18101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.61 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.36 EUR |
| 3000+ | 0.35 EUR |
| SI8406DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 16A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
auf Bestellung 5466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.43 EUR |