auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 206+ | 0.70 EUR |
| 207+ | 0.67 EUR |
| 222+ | 0.60 EUR |
| 250+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI9433BDY-T1-E3 Vishay
Description: MOSFET P-CH 20V 4.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V.
Weitere Produktangebote SI9433BDY-T1-E3 nach Preis ab 0.51 EUR bis 2.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI9433BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
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Si9433BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V 6.2A 0.04Ohm |
auf Bestellung 16463 Stücke: Lieferzeit 10-14 Tag (e) |
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Si9433BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Drain-source voltage: -20V Drain current: -5A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 389 Stücke: Lieferzeit 7-14 Tag (e) |
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Si9433BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Drain-source voltage: -20V Drain current: -5A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 389 Stücke: Lieferzeit 7-14 Tag (e) |
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Si9433BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Drain-source voltage: -20V Drain current: -5A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SO8 |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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Si9433BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 974 Stücke: Lieferzeit 10-14 Tag (e) |
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| Si9433BDY-T1-E3 | Hersteller : Siliconix |
Transistor P-Channel MOSFET; 20V; 12V; 60mOhm; 4,5A; 1,3W; -55°C ~ 150°C; Equivalent: SI9433BDY-E3; SI9433BDY-T1-E3; SI9433BDY-T1-GE3; SI9433BDY TSI9433bdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI9433BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9433BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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Si9433BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| Si9433BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A Drain-source voltage: -20V Drain current: -6.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -20A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |