Technische Details SI9910DY-T1-E3 VISHAY
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10.8V ~ 16.5V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 500 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 50ns, 35ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1A, 1A, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Weitere Produktangebote SI9910DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI9910DY-T1-E3 | Hersteller : Vishay / Siliconix |
 0712 |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9910DY-T1-E3 | Hersteller : Vishay |
Driver 1A 1-OUT High Side Half Brdg Non-Inv 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI9910DY-T1-E3 | Hersteller : Vishay |
Driver 1A 1-OUT High Side Half Brdg Non-Inv 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI9910DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10.8V ~ 16.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 500 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 35ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1A, 1A Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SI9910DY-T1-E3 | Hersteller : Vishay / Siliconix |
Gate Drivers MOSFET Driver |
Produkt ist nicht verfügbar |