Si9933CDY-T1-E3 Vishay Siliconix

Description: MOSFET 2P-CH 20V 4A 8SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.