Technische Details SI9936DY SILICONIX
Description: MOSFET 2N-CH 30V 5A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI9936DY
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SI9936DY | Hersteller : onsemi |
 Description: MOSFET 2N-CH 30V 5A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
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