SI9955DY
Hersteller:
auf Bestellung 515 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SI9955DY
Description: MOSFET 2N-CH 50V 3A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3A, Drain to Source Voltage (Vdss): 50V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI9955DY
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SI9955DY | ONS/FAI |
Dual N-Channel Enhancement Mode MOSFET 50 V, 3A, 2W, 0,13 Ohm Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SI9955DY | onsemi |
Description: MOSFET 2N-CH 50V 3A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 50V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SI9955DY | onsemi |
Description: MOSFET 2N-CH 50V 3A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 50V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI9955DY | onsemi / Fairchild |
MOSFET SO8 DUAL NCH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI9955DY | Vishay |
Vishay OBS REPLACE WITH SI9945AEY |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI9955DY |
|
Hersteller: ONS/FAI
Dual N-Channel Enhancement Mode MOSFET 50 V, 3A, 2W, 0,13 Ohm Транзистори
Dual N-Channel Enhancement Mode MOSFET 50 V, 3A, 2W, 0,13 Ohm Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI9955DY |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 50V 3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 50V 3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI9955DY |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 50V 3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 50V 3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI9955DY |
|
Hersteller: onsemi / Fairchild
MOSFET SO8 DUAL NCH
MOSFET SO8 DUAL NCH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI9955DY |
|
Hersteller: Vishay
Vishay OBS REPLACE WITH SI9945AEY
Vishay OBS REPLACE WITH SI9945AEY
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH