Produkte > VISHAY SILICONIX > SIA413ADJ-T1-GE3
SIA413ADJ-T1-GE3

SIA413ADJ-T1-GE3 Vishay Siliconix


sia413adj.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 2900 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIA413ADJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 12V 12A PPAK SC70-6, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK® SC-70-6 Single, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 19W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V.

Weitere Produktangebote SIA413ADJ-T1-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3 Vishay Siliconix sia413adj.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3 Vishay / Siliconix sia413adj.pdf MOSFETs -12V Vds 8V Vgs PowerPAK SC-70
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA413ADJ-T1-GE3 sia413adj.pdf
SIA413ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA413ADJ-T1-GE3 sia413adj.pdf
SIA413ADJ-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs -12V Vds 8V Vgs PowerPAK SC-70
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH