SIA413ADJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 12+ | 1.53 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.72 EUR |
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Technische Details SIA413ADJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V.
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