SIA4446DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
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Technische Details SIA4446DJ-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIA4446DJ-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIA4446DJ-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIA4446DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH