SIC10120PTA-BP Micro Commercial Components (MCC)
Hersteller: Micro Commercial Components (MCC)
Schottky Diodes & Rectifiers 1200V,10A,SIC 105A 35A 140W
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.32 EUR |
| 10+ | 26.93 EUR |
| 25+ | 25.82 EUR |
| 50+ | 24.99 EUR |
| 100+ | 22.74 EUR |
| 250+ | 21.63 EUR |
| 500+ | 20.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIC10120PTA-BP Micro Commercial Components (MCC)
Description: DIODE SIL CARB 1.2KV 10A TO247AD, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AD, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote SIC10120PTA-BP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIC10120PTA-BP | Micro Commercial Co |
Description: DIODE SIL CARB 1.2KV 10A TO247AD Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AD Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 750pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIC10120PTA-BP |
|
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 1.2KV 10A TO247AD
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1.2KV 10A TO247AD
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH