SIC1060PL8-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
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Technische Details SIC1060PL8-TP MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 452pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DFN8080A, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 44 µA @ 650 V.
Weitere Produktangebote SIC1060PL8-TP nach Preis ab 4.05 EUR bis 10.3 EUR
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SIC1060PL8-TP | MCC (Micro Commercial Components) |
Description: DIODE SIL CARB 650V 10A DFN8080A Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 452pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DFN8080A Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 44 µA @ 650 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIC1060PL8-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.3 EUR |
| 10+ | 6.91 EUR |
| 100+ | 4.99 EUR |
| 500+ | 4.17 EUR |
| 1000+ | 4.05 EUR |