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SICU0460B-TP

SICU0460B-TP Micro Commercial Components (MCC)

SICU0460B_DPAK_-2487900.pdf Hersteller: Micro Commercial Components (MCC)
Schottky Diodes & Rectifiers 650V,4A,SIC 34A 20A 60W
auf Bestellung 2423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.52 EUR
10+ 3.8 EUR
100+ 3.08 EUR
250+ 2.97 EUR
500+ 2.73 EUR
1000+ 2.34 EUR
2500+ 2.2 EUR
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Technische Details SICU0460B-TP Micro Commercial Components (MCC)

Description: DIODE SIL CARBIDE 650V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 15 µA @ 650 V.

Weitere Produktangebote SICU0460B-TP

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SICU0460B-TP SICU0460B-TP Hersteller : Micro Commercial Components sicu0460bdpak.pdf Rectifier Diode Schottky SiC 650V 4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
SICU0460B-TP SICU0460B-TP Hersteller : Micro Commercial Co SICU0460B(DPAK).pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
Produkt ist nicht verfügbar
SICU0460B-TP SICU0460B-TP Hersteller : Micro Commercial Co SICU0460B(DPAK).pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
Produkt ist nicht verfügbar