SICU0460B-TP Micro Commercial Components (MCC)
auf Bestellung 2369 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.74 EUR |
| 10+ | 3.68 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 2.04 EUR |
| 2500+ | 2.02 EUR |
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Technische Details SICU0460B-TP Micro Commercial Components (MCC)
Description: DIODE SIL CARBIDE 650V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 15 µA @ 650 V.
Weitere Produktangebote SICU0460B-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SICU0460B-TP | Hersteller : Micro Commercial Components |
 Rectifier Diode Schottky SiC 650V 4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SICU0460B-TP | Hersteller : MCC (Micro Commercial Components) |
Description: DIODE SIL CARBIDE 650V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 15 µA @ 650 V |
Produkt ist nicht verfügbar |
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SICU0460B-TP | Hersteller : MCC (Micro Commercial Components) |
Description: DIODE SIL CARBIDE 650V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 15 µA @ 650 V |
Produkt ist nicht verfügbar |