SICW028N120A4-BP Micro Commercial Co

Description: MOSFET N-CH 1200 V 80A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 16V, 20V, Vgs (Max): +22V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V.