SICW028N120A4-BP Micro Commercial Components (MCC)
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.12 EUR |
| 10+ | 24.24 EUR |
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Technische Details SICW028N120A4-BP Micro Commercial Components (MCC)
Description: MOSFET N-CH 1200 V 80A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 16V, 20V, Vgs (Max): +22V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V.
Weitere Produktangebote SICW028N120A4-BP nach Preis ab 23.53 EUR bis 39.28 EUR
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SICW028N120A4-BP | Hersteller : Micro Commercial Co |
 Description: MOSFET N-CH 1200 V 80A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 15mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 16V, 20V Vgs (Max): +22V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SICW028N120A4-BP | Hersteller : Micro Commercial Components |
SIC MOSFETS N-CHANNELMOSFET TO-247-4 |
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