SICW030N120H-BP MCC (Micro Commercial Components)


SICW030N120H(TO-247AB).pdf
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247AB
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247AB
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Power Dissipation (Max): 375W (Tc)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SICW030N120H-BP MCC (Micro Commercial Components)

Description: SIC MOSFETS,TO-247AB, Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247AB, Vgs(th) (Max) @ Id: 4.5V @ 50mA, Power Dissipation (Max): 375W (Tc).

Weitere Produktangebote SICW030N120H-BP

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SICW030N120H-BP SICW030N120H-BP Micro Commercial Components (MCC) SICW030N120H_TO_247AB_.pdf SiC MOSFETs SIC MOSFETS,TO-247AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SICW030N120H-BP SICW030N120H_TO_247AB_.pdf
Hersteller: Micro Commercial Components (MCC)
SiC MOSFETs SIC MOSFETS,TO-247AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH